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InGaAs Photodiodes

Room Temperature  |  Thermoelectrically Cooled


Room Temperature InGaAs Photodiodes

Part Number I-.05 I-.10 I-.30 I-.50
Active Area Diameter um 50 100 300 500
Responsivity @ 1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90 0.80/0.90
                     1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95 0.90/0.95
Dark Current @ 5V nA Max/Typ .07/.03 1.0/.05 5.0/1.0 25/5
Capacitance @ 5V pF Max/Typ 0.6/0.4 1.2/1.0 8.0/4.0 40@0V
Bandwidth 50Ω-3dB GHz Min @5V 2.6 2.0 0.7 0.20
Rise/Fall time RL= 50Ω ns Max @ 5V 0.08 0.1 0.25 0.50
NEP @ 1550nm W/√Hz Typ 1.0E-15 1.5E-15 5E-15 8E-15
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125 -40 to 125
Operating temperature °C -40 to 85 -40 to 85 -40 to 85 -40 to 85
Reverse Voltage V 25 25 25 20
Reverse Current mA 1 10 10 10
Forward Current mA 10 10 10 10
Package Options * (Note) CH-CE-46-46L CH-CE-46-46L CH-CE-46-46L CH-CE-46-46L

 
Part Number I-1 I-2 I-3 I-5
Active Area Diameter mm 1.0 2.0 3.0 5.0
Responsivity @1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90 0.80/0.90
                    1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95 0.90/0.95
Dark Current nA Max/Min 100/25 @5V 200/50 @1V 500/200 @1V 5000 @0.3V
C @ 0V pF Max/Min 120/80 500/300 1000/600 1500/1000
C pF Max/Min 50/30 @-5V 150/100@-3V 300/250@-2V 3000/2000
Bandwidth 50Ω-3dB Ghz 40@5V 5.3@0V 4.0@0V 1@0V
T, RL= 50Ω ns Typ 5.0@5V 50@0V 100@0V 300@0V
Res, MΩ Min/Typ 10/50 6/30 2.0/8 0.025/0.050
NEP @1550 nm W/√Hz Typ .01 .03 .05 .28
Linear Range (±0.2dB) dBm 10 8 8 8
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125 -40 to 125
Operating Temperature °C -40 to 85 -40 to 85 -40 to 85 -40 to 85
Reverse Voltage V 20 3 2 2
Reverse Current mA 10 10 10 10
Forward Current mA 10 10 10 10
Power Dissipation mW 100 50 50 50
Package Options * (Note) CH-CE-46-46L CH-CE-5 CH-CE-5 CH-CE-8

NOTE:   * CH = Chip   CE = Ceramic Carrier    46 = TO46 Hermetic Package    46L TO46 Hermetic Lens Package
5 = TO5 Hermetic Package    8 = TO8 Hermetic Package    ~    Custom filters, windows and packages are available

Application Notes:
NEP PbS, PbSe & InGaAs Product Numbering

 

Technical Notes
Windows & Filters
InGaAs Detector Controller
Custom Filters
 

Thermoelectrically Cooled InGaAs Photodiodes

Part Number IC1-1 IC1-2 IC1-3 IC1-5
Active Area Diameter mm 1 2 3 5
Responsivity @ 1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90 0.80/0.90
                     1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95 0.90/0.95
NEP @ 1550nm W/√Hz Typ 5.0E-15 1.0E-14 2.0E-14 3.0E-14
Dark Current nA @ 1V Typ/Max 0.07/0.35 0.3/1.5 1.0/5.0 2.5/12.5
Capacitance pF @ 1V 150 550 1000 3500
Cut-Off Frequency @ 1V MHz 18 4 2 0.6
Shunt Resistance M ohms 1500 300 100 30
Reverse Voltage Max 5 5 5 2
Storage Temperature °C -55 to 85 -55 to 85 -55 to 85 -55 to 85
Test temperature °C -10 -10 -10 -10
Cooler Power Max 1.0V@2.0A 1.0V@2.0A 1.0V@2.0A 2V@1.3A
Package Options * xx 5, 7 5, 7 5, 7 8, 6
Thermistor @ 25°C** 1K 1K 1K 1K

 
Part Number IC2-1 IC2-2 IC2-3 IC2-5
Active Area Diameter mm 1 2 3 5
Responsivity @ 1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90 0.80/0.90
                     1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95 0.90/0.95
NEP @1550 nm W/√Hz Typ 3E-15 7E-15 1E-14 2E-14
Dark Current nA @ 1V Typ/Max 0.03/0.15 0.15/0.75 0.5/2.5 1.2/6.0
Capacitance pF @ 1V 150 550 1000 3500
Cut-Off Frequency @ 1V MHz 18 4 2 0.6
Shunt Resistance M ohms 3000 600 200 60
Reverse Voltage Max 5 5 5 5
Storage Temperature °C -55 to 85 -55 to 85 -55 to 85 -55 to 85
Test Temperature °C -20 -20 -20 -20
Cooler Power Max 0.8V@1.3A 0.8V@1.3A 0.8V@1.3A 1.9V@1.4A
Package Options * xx 5, 7 5, 7 5, 7 8, 6
Thermistor @ 25°C** 1K 1K 1K 1K

NOTE:      * Other Packages are available      ** Other Thermistors are available      xx Band Pass Filters are available

Application Notes:
NEP PbS, PbSe & InGaAs Product Numbering


 

Technical Notes
Windows & Filters
InGaAs Detector Controller
Custom Filters