High Speed Photoreceivers – up to 200 MHz
- Si and InGaAs Photodiodes
- Wavelength Range from 320 to 1650 nm
- Bandwidth from Real DC to 200 MHz
- Max. Conversion Gain 2 x 104 V/W
- Min. NEP approx. 6 pW/√Hz
Photoreceivers with high sensitivity at high bandwidth
The series HCA-S-200M Photoreceivers combine fast photodiodes with the proven and outstanding FEMTO HCA Current Amplifier technology. The HCA-S-200M is available with either a fast large area Si or InGaAs photodiode covering a spectral range from 320 to 1000 nm and 900 to 1650 nm, respectively. The amplifier transimpedance is 2 x 104 V/A resulting in a maximum conversion gain of 2 x 104 V/W at 1550 nm for the InGaAs model. The sophisticated DC coupled multi-stage amplifier design allows measurements from DC to a maximum bandwidth of 200 MHz corresponding to a minimum rise-time of 1.8 ns. With a NEP as low as 6 pW/√Hz signals with an optical power in the micro-Watt range can be detected without the need for further averaging.
Customized Photoreceivers
Every application is different with its individual requirements for bandwidth, gain and responsivity. Therefore FEMTO offers customized photoreceivers with optimized specifications for a great variety of applications in addition to the standard product portfolio. After a detailed analysis we offer individual solutions at very reasonable prices and already in single quantities.
More information on custom photoreceivers.
Applications
- Spectroscopy
- Fast Pulse and Transient Measurements
- Optical Triggering
- Optical Front-End for Oscilloscopes, A/D Converters and Ultra Fast Lock-In Amplifiers
Photoreceivers
| Model | HCA-S-200M-SI | HCA-S-200M-IN |
| Spectral Range | 320 ... 1000 nm | 900 ... 1700 nm |
| Bandwidth (-3dB) | DC ... 200 MHz | DC ... 200 MHz |
| Rise/Fall Time (10% - 90%) | 1.8 ns | 1.8 ns |
| Transimpedance Gain | 2 x 104 V/A | 2 x 104 V/A |
| Max. Conversion Gain | 1.1 x 104 V/W (@ 800 nm) | 1.9 x 104 V/W (@ 1550 nm) |
| Min NEP (@ 1 MHz) | 9.3 fW/√Hz (@ 800 nm) | 5.4 fW/√Hz (@ 1550 nm) |
| Saturation Power | 110 μW (@ 800 nm) | 60 μW (@ 1550 nm) |
| Detector | Si PIN, Ø 0.8 mm | InGaAs PIN, Ø 0.3 mm |
| Input | Free Space, 25 mm Ø Flange | |
| Output | 50 MΩ, BNC | |
| Output Voltage Range | ± 1.7 V @ > 50 MΩ Load | |
| Power Requirements | ± 15 V, ± 60 mA Typ. | |
| CAB-LN1 Low Noise Input/Output Cable available for frequencies up to 1MHz Threaded M4 and 8-32 holes for mounting on standard posts. 25 mm Ø flange compatible with microbench systems. Offset adjustable by trimpot. Fiber optic input optional. Output short-circuit protected. Power supply via 3-pin LEMO socket. A mating connector is provided with the device. Optional power supply PS-15 is available. For further information please view the datasheet. |
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