IBSG Co. Ltd. was founded by several leading researchers from the Ioffe Physico-Technical Institute in 1992 and specialized in developing and manufacturing of optoelectronic devices for mid-infrared spectral range. They provide the complete technological cycle including heterostructure growth using liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD), photolithography, assembling, characteristics testing and producing of related electronic devices.
IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems for ecological monitoring, on-line technological process control, medical diagnostic and many other applications.
IBSG Photodiodes are designed for detecting radiation in the Mid-Infrared (Mid-IR)spectral range from 1500 to 3800 nm. Heterostructures with the Indium Gallium Arsenide Antimonide (InGaAsSb) sensitive layer and the Aluminium Gallium Arsenide Antimonide (AlGaAsSb) “window” are grown on Gallium Antimonide (GaSb) substrates.
The Photodiodes are mounted in standard TO-18 packages and for TE cooled versions in TO-5 packages. They have photosensitive areas with diameter of 0.2 – 2.0 mm. They can be used with high frequency modulated laser or LED emission because of their fast response time.
- The IBSG photoreceivers can be used with their Mid-IR LEDs.
- IBSG offers two (2) amplifiers models for standard and TEC photodiodes.
IBSG Mid-IR Photodiodes
| Part Number | Wavelength nm | Responsivity A/W | Detectivity x1010 | Active Area mmØ | Substrate | Reflector | Window | TE Cooler | Package |
|---|---|---|---|---|---|---|---|---|---|
| PD23-02 | 2300 - 2350 | 1.0 | 5.0 | 0.2 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD23-02-PR | 2300 - 2350 | 1.0 | 5.0 | 0.2 | InGaAsSb/ GaSb | Yes | Option | TO-18 | |
| PD24-02 | 2380 - 2410 | 1.0 | 6.0 | 0.2 | InGaAsSb/ GaSb | Option | Option | T0-18 | |
| PD24-03 | 2370 - 2420 | 1.0 | 5.0 | 0.3 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD24-03-PR | 2370 - 2420 | 1.0 | 5.0 | 0.3 | InGaAsSb/ GaSb | Yes | Option | TO-18 | |
| PD24-03-TEC | 2320 - 2400 | 1.0 | 20 | 0.3 | InGaAsSb/ GaSb | Option | Option | Yes | TO-5 |
| PD24-05 | 2380-2430 | 1.0 | 5.0 | 2.0 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD24-05-PR | 2380-2430 | 1.0 | 5.0 | 2.0 | InGaAsSb/ GaSb | Yes | Option | TO-18 | |
| PD24-05-TEC | 2320-2400 | 1.0 | 20 | 0.5 | InGaAsSb/ GaSb | Option | Option | Yes | TO-5 |
| PD24-10 | 2380 - 2430 | 1.0 | 5.0 | 1.0 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD24-10-PR | 2380 - 2430 | 1.0 | 5.0 | 1.0 | InGaAsSb/ GaSb | Yes | Option | TO-18 | |
| PD24-20-TEC | 2350 - 2400 | 1.0 | 19 | 2.0 | InGaAsSb/ GaSb | Option | Option | Yes | TO-5 |
| PD25-03-TEC | 2530 - 2580 | 1.0 | 3.0 | 0.5 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD25-05 | 2530 - 2580 | 1.0 | 3.0 | 2.0 | InGaAsSb/ GaSb | Option | TO-18 | ||
| PD25-05-PR | 2530 - 2580 | 1.0 | 3.0 | 2.0 | InGaAsSb/ GaSb | Yes | Option | TO-18 | |
| PD36-02-TEC | 1500 - 3800 | 1.1 | 0.8 | 0.2 | InGaAsSb/ GaSb | Sapphire | Yes | TO-5 | |
| PD36-03-TEC | 2500 - 3300 | 1.1 | 0.8 | 0.3 | InGaAsSb/ GaSb | Sapphire | Yes | TO-5 | |
| PD48-03-NS / -PR | 2500-4900 | 1.1 | 0.8 | 0.3 | InGaAsSb/ GaSb | Option | Option | TO-18 | |
| PD48-03-WS-& -PR | 800-4800 | 1.1 | 0.8 | 0.3 | InGaAsSb/ GaSb | Option | Option | TO-18 | |
| PD48-05-NS & -PR | 2500-4900 | 1.1 | 0.8 | 0.5 | InGaAsSb/ GaSb | Option | Option | TO-18 | |
| PD48-05-WS & -PR | 800-4800 | 1.1 | 0.8 | 0.5 | InGaAsSb/ GaSb | Option | Option | TO-18 | |
| PD23...48 Chips | All |
IBSG Photodiode Amplifiers
Photodiodes
PDXX–YY, PDXX–YY-PR
PDXX–YY-TEC
Technical Notes:
Photodiodes with 1.3 to 2.4um Response:
Photodiodes with 2.4 to 3.8um Response: