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IBSG Co. Ltd. was founded by several leading researchers from the Ioffe Physico-Technical Institute in 1992 and specialized in developing and manufacturing of optoelectronic devices for mid-infrared spectral range. They provide the complete technological cycle including heterostructure growth using liquid phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD), photolithography, assembling, characteristics testing and producing of related electronic devices.

IBSG produces the full line of light emitting diodes, laser diodes and photodiodes for mid-infrared spectral range 1600-5000 nm. In addition to a wide range of standard products they offer custom designed solutions for different purposes. You can find use of IBSG products in detection systems for ecological monitoring, on-line technological process control, medical diagnostic and many other applications.

IBSG Photodiodes are designed for detecting radiation in the Mid-Infrared (Mid-IR)spectral range from 1500 to 3800 nm. Heterostructures with the Indium Gallium Arsenide Antimonide (InGaAsSb) sensitive layer and the Aluminium Gallium Arsenide Antimonide (AlGaAsSb) “window” are grown on Gallium Antimonide (GaSb) substrates.

The Photodiodes are mounted in standard TO-18 packages and for TE cooled versions in TO-5 packages. They have photosensitive areas with diameter of 0.2 – 2.0 mm. They can be used with high frequency modulated laser or LED emission because of their fast response time.

Related products:

IBSG Mid-IR Photodiodes

Part
Number
Wavelength
nm
Responsivity
A/W
Detectivity
x1010
Active Area
mmØ
SubstrateReflectorWindowTE
Cooler
Package
PD23-022300 - 23501.05.00.2InGaAsSb/
GaSb
OptionTO-18
PD23-02-PR2300 - 23501.05.00.2InGaAsSb/
GaSb
YesOptionTO-18
PD24-022380 - 24101.06.00.2InGaAsSb/
GaSb
OptionOptionT0-18
PD24-032370 - 24201.05.00.3InGaAsSb/
GaSb
OptionTO-18
PD24-03-PR2370 - 24201.05.00.3InGaAsSb/
GaSb
YesOptionTO-18
PD24-03-TEC2320 - 24001.0200.3InGaAsSb/
GaSb
OptionOptionYesTO-5
PD24-052380-24301.05.02.0InGaAsSb/
GaSb
OptionTO-18
PD24-05-PR2380-24301.05.02.0InGaAsSb/
GaSb
YesOptionTO-18
PD24-05-TEC2320-24001.0200.5InGaAsSb/
GaSb
OptionOptionYesTO-5
PD24-102380 - 24301.05.01.0InGaAsSb/
GaSb
OptionTO-18
PD24-10-PR2380 - 24301.05.01.0InGaAsSb/
GaSb
YesOptionTO-18
PD24-20-TEC2350 - 24001.0192.0InGaAsSb/
GaSb
OptionOptionYesTO-5
PD25-03-TEC2530 - 25801.03.00.5InGaAsSb/
GaSb
OptionTO-18
PD25-052530 - 25801.03.02.0InGaAsSb/
GaSb
OptionTO-18
PD25-05-PR2530 - 25801.03.02.0InGaAsSb/
GaSb
YesOptionTO-18
PD36-02-TEC1500 - 38001.10.80.2InGaAsSb/
GaSb
SapphireYesTO-5
PD36-03-TEC2500 - 33001.10.80.3InGaAsSb/
GaSb
SapphireYesTO-5
PD48-03-NS / -PR2500-49001.10.80.3InGaAsSb/
GaSb
OptionOptionTO-18
PD48-03-WS-& -PR800-48001.10.80.3InGaAsSb/
GaSb
OptionOptionTO-18
PD48-05-NS & -PR 2500-49001.10.80.5InGaAsSb/
GaSb
OptionOptionTO-18
PD48-05-WS & -PR800-48001.10.80.5InGaAsSb/
GaSb
OptionOptionTO-18
PD23...48 ChipsAll

IBSG Photodiode Amplifiers 

Photodiodes

PDXXYY, PDXXYY-PR

PDXXYY-TEC

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